RAPID THERMAL ANNEALING OF SILICON SOLAR CELL USINGINCOHERENT LIGHT SOURCE

Raid    Ismail; Mouslm   Jawod; Suad   Kalil

doi:10.24996/ijs.2009.50.Appendix.%g

RAPID THERMAL ANNEALING OF SILICON SOLAR CELL USINGINCOHERENT LIGHT SOURCE

Authors

Raid Ismail School of applied sciences, University of Technology. Baghdad- Iraq
Mouslm Jawod School of applied sciences, University of Technology. Baghdad- Iraq
Suad Kalil Department of Physics, College of Education for Women, University of Baghdad. Baghdad- Iraq

DOI:

https://doi.org/10.24996/ijs.2009.50.Appendix.%25g

Keywords:

ANNEALING, USINGINCOHERENT

Abstract

The rapid thermal annealing (RTA) of single crystal silicon solar cell using the
radiation from a halogen lamp has been demonstrated. The electrical properties
under dark and illumination conditions followed by RTA are presented. The
maximum conversion efficiency and filling factor obtained after ٦٠٠oC/٢٠S RTA
were ١٣% and ٠.٧ respectively

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Published

2025-01-14

Issue

Vol. 50 No. Appendix (2009)

Section

Physics

License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

[1]

R. . . Ismail, M. . . Jawod, and S. . . Kalil, “RAPID THERMAL ANNEALING OF SILICON SOLAR CELL USINGINCOHERENT LIGHT SOURCE”, Iraqi Journal of Science, vol. 50, no. Appendix, pp. 23–26, Jan. 2025, doi: 10.24996/ijs.2009.50.Appendix.%g.